MULTISTEP FINITE VOLUME APPROXIMATIONS TO THE TRANSIENT BEHAVIOR
OF A SEMICONDUCTOR DEVICE ON GENERAL 2D OR 3D MESHES

Journal of Computational Mathematics ›› 2007, Vol. 25 ›› Issue (4) : 485-496.

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Journal of Computational Mathematics ›› 2007, Vol. 25 ›› Issue (4) : 485-496.

MULTISTEP FINITE VOLUME APPROXIMATIONS TO THE TRANSIENT BEHAVIOR
OF A SEMICONDUCTOR DEVICE ON GENERAL 2D OR 3D MESHES

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MULTISTEP FINITE VOLUME APPROXIMATIONS TO THE TRANSIENT BEHAVIOROF A SEMICONDUCTOR DEVICE ON GENERAL 2D OR 3D MESHES

    Min Yang
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{{article.zuoZheCn_L}}. {{article.title_cn}}. {{journal.qiKanMingCheng_CN}}, 2007, 25(4): 485-496
{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}, 2007, 25(4): 485-496
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