SPNP晶体管辐照损伤效应的有限元数值模拟

doi:10.12288/szjs.s2021-0807

数值计算与计算机应用 ›› 2022, Vol. 43 ›› Issue (3): 237-247.DOI: 10.12288/szjs.s2021-0807

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SPNP晶体管辐照损伤效应的有限元数值模拟

倪宇晖¹, 张倩茹^2,3, 王芹^2,3, 阳莺¹, 卢本卓^2,3

1. 桂林电子科技大学数学与计算科学学院, 广西高校数据分析与重点实验室, 桂林 541004;
2. LSEC, 国家数学与交叉科学中心, 中国科学院数学与系统科学研究院, 计算数学与科学工程计算研究所, 北京 100190;
3. 中国科学院大学数学科学学院, 北京 100049

收稿日期:2021-11-06 出版日期:2022-09-14 发布日期:2022-09-09
通讯作者: 卢本卓,Email:bzlu@lsec.cc.ac.cn
基金资助:
国家自然科学基金（11771435，22073110，12161026）、广西自然科学基金（2020GXNSFAA159098）、桂林电子科技大学数学与计算科学学院研究生优秀学位论文培育项目（2020YJSPYA02）资助.

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倪宇晖, 张倩茹, 王芹, 阳莺, 卢本卓. SPNP晶体管辐照损伤效应的有限元数值模拟[J]. 数值计算与计算机应用, 2022, 43(3): 237-247.

Ni Yuhui, Zhang Qianru, Wang Qin, Yang Ying, Lu Benzhuo. FINITE ELEMENT SIMULATIONS OF RADIATION DAMAGE EFFECTS OF SUBSTRATE PNP BJTS[J]. Journal on Numerica Methods and Computer Applications, 2022, 43(3): 237-247.

FINITE ELEMENT SIMULATIONS OF RADIATION DAMAGE EFFECTS OF SUBSTRATE PNP BJTS

Ni Yuhui¹, Zhang Qianru^2,3, Wang Qin^2,3, Yang Ying¹, Lu Benzhuo^2,3

1. Department of Computational Science and Mathematics, Guangxi Colleges and Universities Key Laboratory of Data Analysis and Computation, Guilin University of Electronic Technology, Guilin 541004, China;
2. LSEC, NCMIS, Institute of Computational Mathematics and Scientific/Engineering Computing, Academy of Mathematics and Systems Science, Chinese Academy of Sciences, Beijing 100190, China;
3. School of Mathematical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2021-11-06 Online:2022-09-14 Published:2022-09-09

结合辐照损伤模型和漂移扩散模型，研究辐照效应对衬底PNP （SPNP）双极型晶体管电学性质的影响.基于三维并行自适应有限元平台Parallel Hierarchical Grid （PHG），采用倒数平均有限元法对漂移扩散方程进行离散求解.同时，对间断的掺杂分布做了连续化处理，使其更接近于物理实际，也更有利于数值计算的健壮性.数值模拟再现了辐照后SPNP晶体管出现的基极电流增大及电流增益退化现象，并与横向PNP （LPNP）晶体管进行对照，最终得到这两类晶体管对辐照损伤的敏感程度上的差异.

关键词： SPNP 晶体管, 漂移扩散模型, 辐照损伤模型, 倒数平均有限元

The effects of irradiation on Substrate PNP (SPNP) bipolar junction transistors (BJTs) are studied by combining the radiation damage model and the drift-diffusion (DD) model. Based on Parallel Hierarchical Grid (PHG), a three-dimensional parallel adaptive finite element platform, the DD model is solved by an inverse averaging finite element method. The discontinuous doping distribution is treated as continuous one to make it closer to the physical reality, and beneficial to the robustness of numerical calculation. The phenomenon of the base current increase and the current gain degradation for irradiated SPNP BJTs are simulated. Through comparing SPNP BJTs with Lateral PNP (LPNP) BJTs, differences between the sensitivity of these two types of BJTs to radiation damage are obtained.

Key words: SPNP BJTs, drift-diffusion model, radiation damage, inverse averaging finite element

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[1]	王芹, 马召灿, 白石阳, 张林波, 卢本卓, 李鸿亮. 三维半导体器件漂移扩散模型的并行有限元方法研究[J]. 数值计算与计算机应用, 2020, 41(2): 85-104.

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SPNP晶体管辐照损伤效应的有限元数值模拟

FINITE ELEMENT SIMULATIONS OF RADIATION DAMAGE EFFECTS OF SUBSTRATE PNP BJTS

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